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Country: Denmark
Uploaded: Jun 10, 2018
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4n60b - pdf

N-Channel MOSFET 650V, 7.0A, 1.35Ω
General Description
Features
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.



VDS = 650V
ID = 7.0A
RDS(ON) ≤ 1.35Ω
@ VGS = 10V
@ VGS = 10V
Applications



Power Supply
PFC
High Current, High Speed Switching
D
G
TO-220F
MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Symbol
Rating
Unit
VDSS
650
V
VGSS
o
TC=25 C
Continuous Drain Current
Pulsed Drain Current
ID
o
TC=100 C
(1)
IDM
o
TC=25 C
Power Dissipation
(1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(3)
(4)
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
V
A
4.4*
A
28*
A
42
W
0.33
W/ C
EAR
13.1
mJ
dv/dt
4.5
V/ns
mJ
PD
o
Derate above 25 C
±30
7.0*
o
EAS
212
TJ, Tstg
-55~150
Symbol
Rating
RθJA
62.5
RθJC
3.01
o
C
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Jun 2011 Version 2.2
(1)